| 摘要 |
A semiconductor device (1) includes an n type epitaxial layer (8), body regions (12) formed in the surface layer part of the n type epitaxial layer (8), n type source regions (16) formed in the surface layer parts of the body regions (12), a gate insulating film (19) formed on the n type epitaxial layer (8), and a gate protection diode (30) and gate electrodes (20) formed on the gate insulating film (19). The gate protection diode (30) includes a first p type region (31), an n type region (32), and a second p type region (33). A first diode (30A) is formed of the first p type region (31) and the n type region (32). A second diode (30B) is formed of the n type region (32) and the second p type region (33). The first p type region (31) is connected to the gate electrode (20). The second p type region (33) is connected to a source electrode (27).
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