| 摘要 |
PROBLEM TO BE SOLVED: To improve switching characteristics of a transistor in which a channel is formed in an oxide semiconductor layer.SOLUTION: A parasitic channel is formed at an end portion of the oxide semiconductor layer because a source and a drain of the transistor are electrically connected to the end portion. That is, when at least one of the source and the drain of the transistor is not electrically connected to the end portion, the parasitic channel is not formed at the end portion. In view of this, a transistor is provided having a structure in which at least one of a source and a drain of the transistor is not or less likely to be electrically connected to an end portion of an oxide semiconductor layer. |
