发明名称 |
REPLACEMENT METAL GATE STRUCTURES FOR EFFECTIVE WORK FUNCTION CONTROL |
摘要 |
A stack of a barrier metal layer and a first-type work function metal layer is deposited in replacement metal gate schemes. The barrier metal layer can be deposited directly on the gate dielectric layer. The first-type work function metal layer is patterned to be present only in regions of a first type field effect transistor. A second-type work function metal layer is deposited directly on the barrier metal layer in the regions of a second type field effect transistor. Alternately, the first-type work function layer can be deposited directly on the gate dielectric layer. The barrier metal layer is patterned to be present only in regions of a first type field effect transistor. A second-type work function metal layer is deposited directly on the gate dielectric layer in the regions of the second type field effect transistor. A conductive material fill and planarization form dual work function replacement gate structures.
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申请公布号 |
US2013175635(A1) |
申请公布日期 |
2013.07.11 |
申请号 |
US201313780003 |
申请日期 |
2013.02.28 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
KWON UNOH;CHUDZIK MICHAEL P.;RAMACHANDRAN RAVIKUMAR |
分类号 |
H01L27/092 |
主分类号 |
H01L27/092 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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