发明名称 |
FIELD PLATE TRENCH TRANSISTOR AND METHOD FOR PRODUCING IT |
摘要 |
A field plate trench transistor having a semiconductor body. In one embodiment the semiconductor has a trench structure and an electrode structure embedded in the trench structure. The electrode structure being electrically insulated from the semiconductor body by an insulation structure and having a gate electrode structure and a field electrode structure. The field plate trench transistor has a voltage divider configured such that the field electrode structure is set to a potential lying between source and drain potentials.
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申请公布号 |
US2013175605(A1) |
申请公布日期 |
2013.07.11 |
申请号 |
US201213717126 |
申请日期 |
2012.12.17 |
申请人 |
INFINEON TECHNOLOGIES AUSTRIA AG;INFINEON TECHNOLOGIES AUSTRIA AG |
发明人 |
HIRLER FRANZ;RIEGER WALTER;MEYER THORSTEN;KLEIN WOLFGANG;PFIRSCH FRANK |
分类号 |
H01L27/04 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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