发明名称 DETECTING METHOD FOR FORMING SEMICONDUCTOR DEVICE
摘要 In one embodiment, a method for detecting design defects is provided. The method includes receiving design data of an integrated circuit (IC) on a wafer, measuring wafer topography across the wafer to obtain topography data, calculating a scanner moving average from the topography data and the design data to provide a scanner defocus map across the wafer, and determining a hotspot design defect from the scanner defocus map. A computer readable storage medium, and a system for detecting design defects are also provided.
申请公布号 US2013176558(A1) 申请公布日期 2013.07.11
申请号 US201213344670 申请日期 2012.01.06
申请人 LIN JYUH-FUH;HUANG TE-CHIH;HUANG GUO-TSAI;HU JIA-RUI;KE CHIH-MING;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 LIN JYUH-FUH;HUANG TE-CHIH;HUANG GUO-TSAI;HU JIA-RUI;KE CHIH-MING
分类号 G01N21/88 主分类号 G01N21/88
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