发明名称 |
Semiconductor Device and Method of Forming Reduced Surface Roughness in Molded Underfill for Improved C-SAM Inspection |
摘要 |
A semiconductor device includes a semiconductor die. An interconnect structure is formed over an active surface of the semiconductor die. An encapsulant is formed over the semiconductor die and interconnect structure including a first surface opposite the interconnect structure. A peripheral portion of the first surface includes a first roughness disposed outside a footprint of the semiconductor die. A semiconductor die portion of the first surface includes a second roughness less than the first roughness disposed over the footprint of the semiconductor die. The first surface of the encapsulant is disposed within a mold and around the semiconductor die to contact a surface of the mold that includes a third roughness equal to the first roughness and a fourth roughness equal to the second roughness. The first roughness includes a roughness of less than 1.0 micrometers. The second roughness includes a roughness in a range of 1.2-1.8 micrometers. |
申请公布号 |
US2013175701(A1) |
申请公布日期 |
2013.07.11 |
申请号 |
US201213720516 |
申请日期 |
2012.12.19 |
申请人 |
STATS CHIPPAC, LTD.;STATS CHIPPAC, LTD. |
发明人 |
PARK SEONGWON;JANG KIYOUN;LEE KYUNGHOON;LEE JAEHYUN |
分类号 |
H01L21/66;H01L23/31 |
主分类号 |
H01L21/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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