RF MEMS ISOLATION, SERIES AND SHUNT DVC, AND SMALL MEMS
摘要
The present invention generally relates to an architecture for isolating an RF MEMS device from a substrate and driving circuit, series and shunt DVC die architectures, and smaller MEMS arrays for high frequency communications. The semiconductor device has one or more cells with a plurality of MEMS devices therein. The MEMS device operates by applying an electrical bias to either a pull-up electrode or a pull-down electrode to move a switching element of the MEMS device between a first position spaced a first distance from an RF electrode and a second position spaced a second distance different than the first distance from the RF electrode. The pull-up and/or pull-off electrode may be coupled to a resistor to isolate the MEMS device from the substrate.
申请公布号
WO2013033613(A3)
申请公布日期
2013.07.11
申请号
WO2012US53481
申请日期
2012.08.31
申请人
CAVENDISH KINETICS, INC;GADDI, ROBERTO;KNIPE, RICHARD L.;VAN KAMPEN, ROBERTUS PETRUS;UNAMUNO, ANARTZ
发明人
GADDI, ROBERTO;KNIPE, RICHARD L.;VAN KAMPEN, ROBERTUS PETRUS;UNAMUNO, ANARTZ