SILICON CARBIDE SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a silicon carbide semiconductor device with improved reliability of a gate insulating film.SOLUTION: The silicon carbide semiconductor device includes: a silicon carbide substrate having a first primary surface and a second primary surface; a first silicon carbide layer of a first conductivity type provided on the first primary surface of the silicon carbide substrate; a second silicon carbide layer of a second conductivity type provided on the first silicon carbide layer; a first silicon carbide region of the first conductivity type and a second silicon carbide region of the first conductivity type provided spaced apart from the first silicon carbide region and having the same depth and the same impurity concentration distribution as the first silicon carbide region that are provided on a surface of the second silicon carbide layer; a third silicon carbide region of the first conductivity type connecting the second silicon carbide region and the first silicon carbide layer; a gate insulating film continuously formed on surfaces of the first silicon carbide region and the second silicon carbide region, and a surface of the second silicon carbide layer sandwiched between the first silicon carbide region and the second silicon carbide region; a gate electrode formed on the gate insulating film; a first electrode buried in a trench at a portion adjacent to the second silicon carbide layer and the first silicon carbide region; and a second electrode formed on the second primary surface of the silicon carbide substrate.