| 摘要 |
A method is provided for fabricating a finFET device. Multiple fin structures are formed over a BOX layer, and a gate stack is formed on the BOX layer. The fin structures each include a semiconductor layer and extend in a first direction, and the gate stack is formed over the fin structures and extends in a second direction. The gate stack includes dielectric and polysilicon layers. Gate spacers are formed on vertical sidewalls of the gate stack, and an epi layer is deposited over the fin structures. Ions are implanted to form source and drain regions, and the gate spacers are etched so that their upper surface is below an upper surface of the gate stack. After etching the gate spacers, silicidation is performed to fully silicide the polysilicon layer of the gate stack and to form silicide regions in an upper surface of the source and drain regions.
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