发明名称 METHODS FOR PROCESSING A SEMICONDUCTOR WAFER, A SEMICONDUCTOR WAFER AND A SEMICONDUCTOR DEVICE
摘要 A semiconductor wafer, comprising multiple active areas suitable for providing semiconductor devices or circuits. Inactive areas separate the active areas from each other. The wafer has a stressed layer with a first surface, and another layer which is in contact with the stressed layer along a second surface of the stressed layer, opposite to the first surface. Multiple trench lines, extend in parallel to the first surface of the stressed layer in an inactive area and have a depth less than the thickness of the semiconductor wafer.
申请公布号 US2013175671(A1) 申请公布日期 2013.07.11
申请号 US201013821070 申请日期 2010.09.30
申请人 RENAUD PHILIPPE;SERRANO ROLAND;FREESCALE SEMICONDUCTOR, INC. 发明人 RENAUD PHILIPPE;SERRANO ROLAND
分类号 H01L21/02;H01L21/78;H01L29/20 主分类号 H01L21/02
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