发明名称 |
ELECTRICAL ISOLATION STRUCTURES FOR ULTRA-THIN SEMICONDUCTOR-ON-INSULATOR DEVICES |
摘要 |
After formation of raised source and drain regions, a conformal dielectric material liner is deposited within recessed regions formed by removal of shallow trench isolation structures and underlying portions of a buried insulator layer in a semiconductor-on-insulator (SOI) substrate. A dielectric material that is different from the material of the conformal dielectric material liner is subsequently deposited and planarized to form a planarized dielectric material layer. The planarized dielectric material layer is recessed selective to the conformal dielectric material liner to form dielectric fill portions that fill the recessed regions. Horizontal portions of the conformal dielectric material liner are removed by an anisotropic etch, while remaining portions of the conformal dielectric material liner form an outer gate spacer. At least one contact-level dielectric layer is deposited. Contact via structures electrically isolated from a handle substrate can be formed within the contact via holes.
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申请公布号 |
US2013175622(A1) |
申请公布日期 |
2013.07.11 |
申请号 |
US201213348018 |
申请日期 |
2012.01.11 |
申请人 |
HARAN BALASUBRAMANIAN S.;HORAK DAVID V.;KOBURGER, III CHARLES W.;PONOTH SHOM;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
HARAN BALASUBRAMANIAN S.;HORAK DAVID V.;KOBURGER, III CHARLES W.;PONOTH SHOM |
分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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