摘要 |
Provided are methods of depositing N-Metals onto a substrate. Some methods comprise providing an initiation layer of TaM or TiM layer on a substrate, wherein M is selected from aluminum, carbon, noble metals, gallium, silicon, germanium and combinations thereof; and exposing the substrate having the TaM or TiM layer to a treatment process comprising soaking the surface of the substrate with a reducing agent to provided a treated initiation layer. |
申请人 |
APPLIED MATERIALS, INC.;GANGULI, SESHADRI;LU, XINLIANG;NOORI, ATIF;MAHAJANI, MAITREYEE;CHEN, SHIH CHUNG;CHANG, MEI |
发明人 |
GANGULI, SESHADRI;LU, XINLIANG;NOORI, ATIF;MAHAJANI, MAITREYEE;CHEN, SHIH CHUNG;CHANG, MEI |