TRANSISTOR USING SINGLE CRYSTAL SILICON NANOWIRE AND METHOD FOR MANUFACTURING SAME

摘要

Disclosed is a transistor using a single crystal silicon nanowire, and a method for manufacturing same. The transistor using the single crystal silicon nanowire comprises a substrate, and a single crystal nanowire that is formed on the substrate. Here, the single crystal silicon nanowire comprises a source region and a drain region that are formed away from each other in a length direction of the single crystal silicon nanowire, and a channel region that is disposed between the source region and the drain region. The width of the channel region in a direction vertical to the length direction is less than the widths of the source region and the drain region. By making a diameter of the channel region of the single crystal silicon nanowire used as a channel of the transistor smaller than the adjacent source region and drain region, it is possible to manufacture the transistor using the nanowire whose parasitic resistance at a source and a drain is low and which has excellent static electricity control. Also, the transistor using the single crystal silicon nanowire may further comprise: a gate electrode that surrounds the channel region; and a high-k gate insulating film between the channel region of the single crystal silicon nanowire and the gate electrode. Thus, by constituting the gate electrode (of the transistor using the single crystal silicon nanowire) in a gate all around (GAA) format, a transistor device using the nanowire can be manufactured which has a fine size and is capable of overcoming a short channel effect.