| 摘要 |
In order to efficiently manufacture a semiconductor device having a plurality of TFTs formed thereon, which can be applied to a variety of uses, a semiconductor device (100) is disclosed that is provided with a first P-type TFT (10a), a second P-type TFT (10b), a first N-type TFT (10c), and a second N-type TFT (10d), each having a channel region that is formed of polycrystalline silicon. When d1, d2, d3, and d4 respectively represent the concentrations of p-type impurities in the respective channel regions of the TFTs (10a to 10d), at least three values out of d1, d2, d3, and d4 are mutually different, and d1, d2, d3, and d4 satisfy relations of d1<d2 and d3<d4.
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