发明名称 |
INTEGRATED CIRCUIT WITH A THIN BODY FIELD EFFECT TRANSISTOR AND CAPACITOR |
摘要 |
An integrated circuit includes a transistor and a capacitor. The transistor includes a first semiconductor layer and a gate stack located on the first semiconductor layer. The gate stack includes a metal layer and a first high-k dielectric layer. A gate spacer is located on sidewalls of the gate stack. The first high-k dielectric layer is located between the first semiconductor layer and the metal layer and between the gate spacer and sidewalls of the metal layer. A first silicide region is located on a first source/drain region. A second silicide region is located on a second source/drain region. The capacitor includes a first terminal that comprises a third silicide region located on a portion of the second semiconductor. A second high-k dielectric layer is located on the silicide region. A second terminal comprises a metal layer that is located on the second high-k dielectric layer.
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申请公布号 |
US2013175596(A1) |
申请公布日期 |
2013.07.11 |
申请号 |
US201213345266 |
申请日期 |
2012.01.06 |
申请人 |
CHENG KANGGUO;DORIS BRUCE;KHAKIFIROOZ ALI;SHAHIDI GHAVAM G.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHENG KANGGUO;DORIS BRUCE;KHAKIFIROOZ ALI;SHAHIDI GHAVAM G. |
分类号 |
H01L27/06;H01L21/8234 |
主分类号 |
H01L27/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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