发明名称 |
REPLACEMENT GATE MOSFET WITH A HIGH PERFORMANCE GATE ELECTRODE |
摘要 |
In a replacement gate scheme, a continuous material layer is deposited on a bottom surface and a sidewall surface in a gate cavity. A vertical portion of the continuous material layer is removed to form a gate component of which a vertical portion does not extend to a top of the gate cavity. The gate component can be employed as a gate dielectric or a work function metal portion to form a gate structure that enhances performance of a replacement gate field effect transistor.
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申请公布号 |
US2013175641(A1) |
申请公布日期 |
2013.07.11 |
申请号 |
US201313780877 |
申请日期 |
2013.02.28 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
LI ZHENGWEN;GUO DECHAO;KNARR RANDOLPH F.;PEI CHENGWEN;WANG GAN;WANG YANFENG;WONG KEITH KWONG HON;YU JIAN;YUAN JUN |
分类号 |
H01L29/78 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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