发明名称 MAGNETIC STRUCTURES, METHODS OF FORMING THE SAME AND MEMORY DEVICES INCLUDING A MAGNETIC STRUCTURE
摘要 Magnetic structures, methods of forming the same, and memory devices including a magnetic structure, include a magnetic layer, and a stress-inducing layer on a first surface of the magnetic layer, a non-magnetic layer on a second surface of the magnetic layer. The stress-inducing layer is configured to induce a compressive stress in the magnetic layer. The magnetic layer has a lattice structure compressively strained due to the stress-inducing layer.
申请公布号 US2013175646(A1) 申请公布日期 2013.07.11
申请号 US201213549901 申请日期 2012.07.16
申请人 KIM KWANG-SEOK;LEE SUNG-CHUL;SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM KWANG-SEOK;LEE SUNG-CHUL
分类号 H01L29/82;G11B5/65;G11B5/66;H01F41/14 主分类号 H01L29/82
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