发明名称 |
MAGNETIC STRUCTURES, METHODS OF FORMING THE SAME AND MEMORY DEVICES INCLUDING A MAGNETIC STRUCTURE |
摘要 |
Magnetic structures, methods of forming the same, and memory devices including a magnetic structure, include a magnetic layer, and a stress-inducing layer on a first surface of the magnetic layer, a non-magnetic layer on a second surface of the magnetic layer. The stress-inducing layer is configured to induce a compressive stress in the magnetic layer. The magnetic layer has a lattice structure compressively strained due to the stress-inducing layer.
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申请公布号 |
US2013175646(A1) |
申请公布日期 |
2013.07.11 |
申请号 |
US201213549901 |
申请日期 |
2012.07.16 |
申请人 |
KIM KWANG-SEOK;LEE SUNG-CHUL;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM KWANG-SEOK;LEE SUNG-CHUL |
分类号 |
H01L29/82;G11B5/65;G11B5/66;H01F41/14 |
主分类号 |
H01L29/82 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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