SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

A semiconductor device is provided with: a semiconductor substrate comprising a first face on which are formed an integrated circuit and an I/O pad which is electrically connected to the integrated circuit, and a second face on the opposite side to the first face; a two-stage through-hole formed on the semiconductor substrate and having a wall face, comprising a first shaped part of tapered shape the aperture radius of which narrows towards the base part of the hole from the second face side to a given position in the thickness direction of the semiconductor substrate, and a second shaped part of cylindrical shape running from the first shaped part to the I/O pad on the first face side; an inorganic insulating film formed on the wall face of the two-stage through-hole and the second face; a metal layer through-electrode formed on the wall face of the two-stage through-hole and the I/O pad; and a wiring pattern formed on the second face and connected to the through-electrode.