发明名称 SWITCHING ELEMENT AND MANUFACTURING METHOD THEREOF
摘要 <p>Provided is a rewritable switching element that is capable of suppressing variations in element characteristics even when miniaturized. The switching element includes the following: a first and second electrode that can be metal-bridged; an ion conduction layer that is formed to fill in at least the space between the first and second electrodes and that comprises a material in which metal ionized by a magnetic field is mobile; a third electrode that is arranged facing the first and second electrodes and to which can be applied a magnetic field for ionizing or reducing metal; and an ion barrier layer comprising material in which metal ions are immobile. The ion barrier layer is arranged between the first and second electrodes and the third electrode.</p>
申请公布号 WO2013103122(A1) 申请公布日期 2013.07.11
申请号 WO2012JP83813 申请日期 2012.12.27
申请人 NEC CORPORATION;BANNO, NAOKI;TADA, MUNEHIRO 发明人 BANNO, NAOKI;TADA, MUNEHIRO
分类号 H01L49/00;H01L21/336;H01L21/82;H01L27/105;H01L29/786;H01L45/00 主分类号 H01L49/00
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