发明名称 |
APPARATUS AND METHOD FOR MEASURING MELT LEVEL OF SILICON SINGLE CRYSTAL GROWER |
摘要 |
PURPOSE: An apparatus and method for measuring the melt level of a single crystal growing device are provided to produce an ingot with high quality by precisely controlling a melt gap. CONSTITUTION: A contact bar (710) moves from a referent position to melt and is in contact with the melt. A moving unit (720) is connected to the contact bar and moves the contact bar. An operation unit (730) measures a melt level by calculating the movement distance of the contact bar. A control unit (740) controls the moving unit and the operation unit. A contact sensor (750) senses a contact between the melt and the contact bar. [Reference numerals] (740) Control unit; (750) Contact sensor
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申请公布号 |
KR20130079829(A) |
申请公布日期 |
2013.07.11 |
申请号 |
KR20120000561 |
申请日期 |
2012.01.03 |
申请人 |
LG SILTRON INCORPORATED |
发明人 |
NOH, TAE SIK;YONG, MUN SUK;NA, GWANG HA |
分类号 |
C30B15/00;C30B29/06;G01F23/04 |
主分类号 |
C30B15/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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