发明名称 APPARATUS AND METHOD FOR MEASURING MELT LEVEL OF SILICON SINGLE CRYSTAL GROWER
摘要 PURPOSE: An apparatus and method for measuring the melt level of a single crystal growing device are provided to produce an ingot with high quality by precisely controlling a melt gap. CONSTITUTION: A contact bar (710) moves from a referent position to melt and is in contact with the melt. A moving unit (720) is connected to the contact bar and moves the contact bar. An operation unit (730) measures a melt level by calculating the movement distance of the contact bar. A control unit (740) controls the moving unit and the operation unit. A contact sensor (750) senses a contact between the melt and the contact bar. [Reference numerals] (740) Control unit; (750) Contact sensor
申请公布号 KR20130079829(A) 申请公布日期 2013.07.11
申请号 KR20120000561 申请日期 2012.01.03
申请人 LG SILTRON INCORPORATED 发明人 NOH, TAE SIK;YONG, MUN SUK;NA, GWANG HA
分类号 C30B15/00;C30B29/06;G01F23/04 主分类号 C30B15/00
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