发明名称 |
A-SI:H ABSORBER LAYER FOR A-SI SINGLE- AND MULTIJUNCTION THIN FILM SILICON SOLAR CELLS |
摘要 |
In order to improve a thin film solar cell with an amorphous silicon absorber layer being in single or in tandem configuration, the addressed absorber layer of a-Si:H is manufactured by plasma enhanced vapor deposition in an RF-SiH4 plasma, wherein the deposition is performed at at least one of at the process pressure below 0.5 mbar and of at an RF power density below 370 W/14000 cm2.
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申请公布号 |
US2013174899(A1) |
申请公布日期 |
2013.07.11 |
申请号 |
US201113820218 |
申请日期 |
2011.09.02 |
申请人 |
FECIORU-MORARIU MARIAN;TEL SOLAR AG |
发明人 |
FECIORU-MORARIU MARIAN |
分类号 |
H01L31/0687;H01L31/0376;H01L31/18 |
主分类号 |
H01L31/0687 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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