发明名称 METAL HARD MASK FABRICATION
摘要 The present disclosure provides for methods of fabricating a metal hard mask and a metal hard mask fabricated by such methods. A method includes flowing at least one metal reactant gas into a reaction chamber configured to perform chemical vapor deposition (CVD), wherein the at least one metal reactant gas includes a metal-halogen gas or a metal-organic gas. The method further includes depositing a hard mask metal layer by CVD using the at least one metal reactant gas.
申请公布号 US2013174982(A1) 申请公布日期 2013.07.11
申请号 US201213343857 申请日期 2012.01.05
申请人 LIN SU-HORNG;WU LIN-JUNG;YANG CHI-MING;LIN CHIN-HSIANG;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 LIN SU-HORNG;WU LIN-JUNG;YANG CHI-MING;LIN CHIN-HSIANG
分类号 H01L21/308;C23C16/08;C23C16/18;C23C16/34;C23C16/50;C23C16/56 主分类号 H01L21/308
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