发明名称 |
METAL HARD MASK FABRICATION |
摘要 |
The present disclosure provides for methods of fabricating a metal hard mask and a metal hard mask fabricated by such methods. A method includes flowing at least one metal reactant gas into a reaction chamber configured to perform chemical vapor deposition (CVD), wherein the at least one metal reactant gas includes a metal-halogen gas or a metal-organic gas. The method further includes depositing a hard mask metal layer by CVD using the at least one metal reactant gas.
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申请公布号 |
US2013174982(A1) |
申请公布日期 |
2013.07.11 |
申请号 |
US201213343857 |
申请日期 |
2012.01.05 |
申请人 |
LIN SU-HORNG;WU LIN-JUNG;YANG CHI-MING;LIN CHIN-HSIANG;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
LIN SU-HORNG;WU LIN-JUNG;YANG CHI-MING;LIN CHIN-HSIANG |
分类号 |
H01L21/308;C23C16/08;C23C16/18;C23C16/34;C23C16/50;C23C16/56 |
主分类号 |
H01L21/308 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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