发明名称 REPLACEMENT OF A FAULTY MEMORY CELL WITH A SPARE CELL FOR A MEMORY CIRCUIT
摘要 A memory integrated circuit device is provided. The device includes a plurality of regular address inputs and at least one spare address input configured for a selected mode or an unselected mode. The device includes a plurality of control inputs, a plurality of data inputs, and a plurality of data outputs. The device has a plurality of memory arrays. Each of the memory arrays comprises a plurality of memory cells. Each of the plurality of memory cells is coupled to a data input/output. The device has a spare group of memory cells comprising a plurality of spare memory cells. Each of the plurality of spare memory cells is externally (or internally) addressable using the address match table and configured with the spare address input; whereupon the spare address input is coupled to the address match table to access the spare memory cells.
申请公布号 US2013176768(A1) 申请公布日期 2013.07.11
申请号 US201313782348 申请日期 2013.03.01
申请人 INPHI CORPORATION;INPHI CORPORATION 发明人 WANG DAVID T.
分类号 G11C29/04;G11C11/24 主分类号 G11C29/04
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