发明名称 |
DOPANT COMPOSITIONS AND THE METHOD OF MAKING TO FORM DOPED REGIONS IN SEMICONDUCTOR MATERIALS |
摘要 |
Dopant compositions comprising a semiconductor material are described. Examples of dopant compositions comprise a particulate dopant component and a liquid or paste component, or comprise a dopant component and a particulate silicon component. Methods of forming doped regions in a semiconductor substrate material using the dopant compositions are described. A dopant composition including a dopant particulate component is described as a dopant source in a method for the formation of radiation-fired or radiation-doped contacts, for example in the formation of laser-fired or laser-doped contacts. Examples of the method find application in relation to the manufacture of photovoltaic cells. The use of doped particulate material, for example a composition including doped silicon powder, may reduce the likelihood of damage to the substrate.
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申请公布号 |
US2013178011(A1) |
申请公布日期 |
2013.07.11 |
申请号 |
US201213598170 |
申请日期 |
2012.08.29 |
申请人 |
GINLEY DAVID S.;CURTIS CALVIN J.;VAN HEST MARINUS FRANCISCUS ANTONIUS MARIA;PLATT HEATHER A. S.;MIEDANER ALEXANDER;CARLSON DAVID E.;BENNETT MURRY S.;REN WENSHENG;ALLIANCE FOR SUSTAINABLE ENERGY, LLC |
发明人 |
GINLEY DAVID S.;CURTIS CALVIN J.;VAN HEST MARINUS FRANCISCUS ANTONIUS MARIA;PLATT HEATHER A. S.;MIEDANER ALEXANDER;CARLSON DAVID E.;BENNETT MURRY S.;REN WENSHENG |
分类号 |
H01L31/18 |
主分类号 |
H01L31/18 |
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