摘要 |
An apparatus is provided, by way of example, a heater for use in semiconductor processing equipment that includes a base functional layer having at least one functional zone. A substrate is secured to the base functional layer, and a tuning layer is secured to the substrate opposite the base functional layer. The tuning layer includes a plurality of zones that is greater in number than the zones of the base functional layer, and the tuning layer has lower power than the base functional layer. Further, a component, such as a chuck by way of example, is secured to the tuning layer opposite the substrate. The substrate defines a thermal conductivity to dissipate a requisite amount of power from the base functional layer. |
申请人 |
WATLOW ELECTRIC MANUFACTURING COMPANY;PTASIENSKI, KEVIN;SMITH, KEVIN, ROBERT;SWANSON, CAL, THOMAS;SCHMIDT, PHILIP, STEVEN |
发明人 |
PTASIENSKI, KEVIN;SMITH, KEVIN, ROBERT;SWANSON, CAL, THOMAS;SCHMIDT, PHILIP, STEVEN |