| 摘要 |
PROBLEM TO BE SOLVED: To provide an oxide thin film (an IGZO film), being excellent in TFT characteristics and stress resistance, and suitable for a thin film transistor.SOLUTION: The oxide thin film for a semiconductor layer of a thin film transistor contains In, Ga, and Zn, and when a film surface layer part from the outermost surface of the oxide thin film to 7nm in the film thickness direction and a film inner part 10nm to 15nm from the outermost surface in the film thickness direction are measured by X-ray photoelectron spectroscopy, an average value of an In content (atom%) of the film surface layer part is no greater than 1.5 times an average value of an In content (atom%) of the film inner part. |
