A light emitting diode and a light emitting diode (LED) manufacturing method are disclosed. The LED comprises a substrate; a first n-type GaN layer; a second n-type GaN layer; an active layer; and a p-type GaN layer formed on the substrate in sequence; the second n-type GaN layers has a bottom surface interfacing with the first n-type GaN layer, a rim of the bottom surface has a roughened exposed portion, and Ga-N bonds on the bottom surface has an N-face polarity.
申请公布号
US2013175498(A1)
申请公布日期
2013.07.11
申请号
US201313781765
申请日期
2013.03.01
申请人
ADVANCED OPTOELECTRONIC TECHNOLOGY, INC.;ADVANCED OPTOELECTRONIC TECHNOLOGY, INC.