发明名称 |
Field-effect transistor and manufacturing method thereof |
摘要 |
The field-effect transistor (20;20';20") includes a substrate (200) having a first doping region (200a) and an overlying second doping region (200b), wherein the first and second doping regions (200a;200b) have a first conductivity type and wherein the second doping region (200b) has at least one first trench (204) and at least one second trench (212) adjacent thereto. A first epitaxial layer (208;208') is disposed in the first trench (204) and has a second conductivity type. A second epitaxial layer (216;216') is disposed in the second trench (212) and has the first conductivity type, wherein the second epitaxial layer (216;216') has a doping concentration greater than that of the second doping region (200b) and less than that of the first doping region (200a). A gate structure (228;230) is disposed on the second trench (212). A method of fabricating the field-effect transistor (20;20';20") is also disclosed. |
申请公布号 |
EP2613357(A2) |
申请公布日期 |
2013.07.10 |
申请号 |
EP20120168146 |
申请日期 |
2012.05.15 |
申请人 |
VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION |
发明人 |
LEE, TSUNG-HSIUNG;TU, SHANG-HUI |
分类号 |
H01L29/78;H01L21/265;H01L21/336;H01L29/06;H01L29/08;H01L29/10 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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