NITRIDE BASED LIGHT EMITTING DEVICE WITH P-TYPE NITRIDE LAYER

摘要

PURPOSE: A nitride based light emitting device including a p-type nitride layer doped with carbon is provided to reduce resistance and to improve luminous efficiency by obtaining a free hole with high concentration which is not easily obtained in a single p-type dopant. CONSTITUTION: An n-type nitride layer is formed on a substrate (110). An active layer (140) is formed on the n-type nitride layer. A p-type nitride layer (150) including Al is formed on the active layer. The concentration of a free hole on the p-type nitride layer is 1 x 10^18 to 1 x 10^19 atoms/cm^3. A transparent electrode layer (160) is formed on the p-type nitride layer.