Method of making a p-n homojunction in a nanostructure

摘要

The method involves forming a dielectric element (3) e.g. inorganic material such as oxide and organic material e.g. polymer, polystyrene, polynaphtalene or polypropylene. The dielectric element is coated on a nanostructure (1) of a semiconductor device (10) to a specific height (H). A potential surface (phi-s) is formed by the dielectric element for inversing conductivity on determined width (W) of a nano component of the nanostructure. Independent claims are also included for the following: (1) a method for realizing a nanostructure with a P-N junction (2) a semiconductor device comprising a nanostructure.