| 摘要 |
<p>To avoid problems of hydrolysis of the silicon oxide formed by PECVD at the surface of at least one wafer, it is proposed to cover, in the vacuum deposition chamber used to deposit the silicon oxide, said oxide with a temporary protective layer containing nitrogen. The protective layer thus protects the silicon oxide against the outer environment and especially against humidity when the wafer provided with the silicon oxide is stored outside of the vacuum deposition chamber. Afterwards, the protective layer is removed, for example, by chemical-mechanical. polishing, just before the two wafers are placed into contact. The protective layer may be formed by a PECVD silicon nitride deposition, by plasma nitriding or nitrogen doping of a superficial portion of the silicon oxide.</p> |
