RESIST UNDERLAYER COMPOSITION AND PROCESS FOR PRODUCING INTEGRATED CIRCUIT DEVICE USING SAME

摘要

PURPOSE: A composition for a resist underlayer film is provided to be able to form a resist underlayer film with an elaborate structure as the etching ability to CFx plasma, coating performance and storage stability are excellent, and the hardness is also good. CONSTITUTION: A composition for a resist underlayer film comprises organic silane polycondensate manufactured by condensation polymerization of hydrolysates produced from compounds of Chemical formula 1:[R^1O]3Si-X, Chemical formula 2:[R^2O]3Si-R^3, and Chemical formula 3: B[OR^4]3; and solvent. In Chemical formula 1, R^1 is substituted or non-substituted C1-6 alkyl, X is substituted or non-substituted C6-30 aryl. In Chemical 2, R^2 is substituted or non-substituted C1-6 alkyl, R^3 is substituted or non-substituted C1-12 alkyl. In Chemical 3, R^4 is substituted or non-substituted C1-6 alkyl. [Reference numerals] (AA) Example 1