MAGNETIC MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PURPOSE: A magnetic memory device and a manufacturing method of the magnetic memory device are provided to pattern an upper magnetic pattern by using an insulating layer as an etching stop film, thereby preventing the failure of an electrical short circuit. CONSTITUTION: A lower magnetic layer, an insulating layer, and an upper magnetic layer are successively formed on a substrate. An upper magnetic layer pattern (185) is formed by patterning the upper magnetic layer until the upper surface of the insulating layer is exposed. An element isolation pattern (220) is formed on the insulating layer and the lower magnetic layer, and an insulating pattern (175) and a lower magnetic pattern (165) are formed on a region in which the element isolation pattern is not formed by performing an oxidation process on the exposed upper surface of the insulating layer.