发明名称 |
COMPOSITION FOR FORMING RESIST FOUNDATION FILM CONTAINING LOW MOLECULAR WEIGHT DISSOLUTION ACCELERATOR |
摘要 |
There is provided a resist underlayer film forming composition that is used in a lithography process for the production of semiconductor devices and that can be developed with an alkaline developer for photoresists, and a method of forming a photoresist pattern by using the resist underlayer film forming composition. The resist underlayer film forming composition used in a lithography process for a production of a semiconductor device comprising: an alkali-soluble resin (a); a polynuclear phenol (b); a compound (c) having at least two vinylether groups; and a photoacid generator (d). The alkali-soluble resin (a) may be a polymer containing a unit structure having a carboxyl group, and the polynuclear phenol (b) may be a compound having 2 to 30 phenolic hydroxyl groups in the molecule. |
申请公布号 |
EP2095189(B1) |
申请公布日期 |
2013.07.10 |
申请号 |
EP20070850422 |
申请日期 |
2007.12.11 |
申请人 |
NISSAN CHEMICAL INDUSTRIES, LTD. |
发明人 |
KATO, MASAKAZU;HAMADA, TAKAHIRO;ENOMOTO, TOMOYUKI |
分类号 |
G03F7/11;G03F7/095;H01L21/027 |
主分类号 |
G03F7/11 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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