| 摘要 |
<p>PURPOSE: An apparatus for forming a CIGS layer is provided to uniformly processing a substrate by supplying more ambient gas to a substrate which is separated from a heater. CONSTITUTION: A chamber(110a) includes a wall(110) for loading substrates(50). A door(120) is installed to the lower part of the wall and opens and closes the wall. A boat(140) is supported by the door. The door and the boat move up and down together. The boat vertically supports the substrates. A heater(133) is installed around the boat and heats the ambient gas of a chamber.</p> |
