| 摘要 |
<p>A method of fabricating an electronic device comprising a substrate having a surface layer A1 and a well-defining bank structure B1 on said surface layer A1 comprises: selectively applying a surface treatment to said surface layer A1 to change a surface energy of a first A1o or second region A1i of said surface layer A1 such that the contact angle of a first solution S1 when deposited on said first region A1o is higher than the contact angle of said first solution S1 when deposited on said second region A1i, said first region A1o surrounding and adjacent said second region A1i; and depositing on said surface layer A1 a bank structure B1 defining a well, said bank structure B1 comprising electrically insulating material and surrounding said first region A1o; depositing said first solution S1 onto the second region A1i of said surface layer A1 and drying said deposited first solution S1 to form a layer; and depositing a second solution S2 over the layer formed by the first solution S1 and onto the first surface layer region, wherein the deposited first solution S1 has a pinning point PP1 at a boundary between said first A1o and second regions A1i of said surface layer and the deposited second solution S2 has another, different pinning point PP2. Also disclosed is the electronic device produced by said method.</p> |
