Verfahren zur Herstellung von fuer Gleichrichter, Richtleiter, Transistoren od. dgl. bestimmten Kristallen,申请号DE1952S027341-传众专利搜索

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发明名称	Verfahren zur Herstellung von fuer Gleichrichter, Richtleiter, Transistoren od. dgl. bestimmten Kristallen
摘要
申请公布号	DE968581(C)	申请公布日期	1958.03.06
申请号	DE1952S027341	申请日期	1952.02.24
申请人	SIEMENS & HALSKE AKTIENGESELLSCHAFT	发明人	HENKER DR. HEINZ
分类号	C30B11/10	主分类号	C30B11/10
代理机构		代理人
主权项
地址

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