发明名称 |
THIN FILM TRANSISTOR, MANUFACTURING METHOD THEREOF AND DISPLAY DEVICE |
摘要 |
<p>Embodiments of the present invention provide a thin film transistor, a manufacturing method thereof and a display device. The method for manufacturing the thin film transistor, comprising the following steps: providing a substrate; forming a semiconductor layer on the substrate; forming a gate insulating layer; and forming a gate electrode, wherein the gate insulating layer comprises a first gate insulating layer, the first gate insulating layer being formed by oxidizing a portion of the semiconductor layer, and the unoxidized portion of the semiconductor layer forming an active layer, and wherein the gate electrode is formed in such a way that the gate insulating layer is sandwiched between the gate electrode and the active layer.</p> |
申请公布号 |
EP2613346(A1) |
申请公布日期 |
2013.07.10 |
申请号 |
EP20120778033 |
申请日期 |
2012.09.19 |
申请人 |
BOE TECHNOLOGY GROUP CO. LTD. |
发明人 |
LI, YANZHAO;WANG, GANG;SUN, LI;GUAN, SHUANG |
分类号 |
H01L21/336;H01L21/28;H01L29/49;H01L29/51;H01L29/786 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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