METHOD FOR PRODUCING ASYMMETRIC DOUBLE-GATE TRANSISTORS, WHEREBY SYMMETRIC AND ASYMMETRIC DOUBLE-GATE TRANSISTORS CAN BE PRODUCED ON THE SAME SUBSTRATE

摘要

The method involves forming structures (150) on a substrate (100), where the structure includes primary semiconductor blocks (110a) forming a primary grid from a double grid of a fin FET transistor, and secondary semiconductor blocks (120a) forming a secondary grid from the double grid of the transistors. The blocks are situated at two sides of a semi-conductor zone (115a), and are separated from the semiconductor zone by two dielectric zones (109a, 119a) of the grids. The semiconductor zone of the secondary block is doped using selective implantation of the primary block of the structure. An independent claim is also included for a microelectronic device e.g. static RAM cell, comprising a finest transistor.