发明名称 |
CROSS-POINT MEMORY STRUCTURES, AND METHODS OF FORMING MEMORY ARRAYS |
摘要 |
<p>Some embodiments include cross-point memory structures. The structures may include a line of first electrode material extending along a first horizontal direction, a multi-sided container of access device materials over the first electrode material, a memory element material within the multi-sided container, and a line of second electrode material over the memory element material and extending along a second horizontal direction that is orthogonal to the first horizontal direction. Some embodiments include methods of forming memory arrays. The methods may include forming a memory cell stack over a first electrode material, and then patterning the first electrode material and the memory cell stack into a first set of spaced lines extending along a first horizontal direction. Spaced lines of second electrode material may be formed over the first set of spaced lines, and may extend along a second horizontal direction that is orthogonal to the first horizontal direction.</p> |
申请公布号 |
EP2399287(A4) |
申请公布日期 |
2013.07.10 |
申请号 |
EP20100744098 |
申请日期 |
2010.01.19 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
SILLS, SCOTT;SANDHU, GURTEJ, S. |
分类号 |
H01L21/8239;H01L21/027;H01L27/10 |
主分类号 |
H01L21/8239 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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