NITRIDE BASED LIGHT EMITTING DEVICE WITH EXCELLENT LIGHT EFFICIENCY USING STRAIN BUFFER LAYER

摘要

PURPOSE: A nitride based light emitting device with excellent light efficiency using a strain buffer layer is provided to minimize the strain of an active layer by controlling the thickness of each layer. CONSTITUTION: A first conductive impurity is doped into a first nitride semiconductor layer. A strain buffer layer (130) is formed on the first nitride semiconductor layer. An active layer (140) is formed on the strain buffer layer. The active layer has quantum wells. A second conductive impurity is doped into a second nitride semiconductor layer (150).