CMP SLURRY COMPOSITION AND POLISHING METHOD USING THE SAME

摘要

PURPOSE: A CMP slurry composition is provided to maintain 200 Å/min or more polishing rate to an oxide film and to have a polishing selectivity which is a ratio of a polishing rate to an oxide film and a polishing rate to a nitride film is 50 or more. CONSTITUTION: A CMP slurry composition uses a monocarboxylic acid as a dispersant and a ceria particle which has a positive surface potential by modifying the surface with a hydrogen phthalate compound; a pH controller; and ultra-pure water. The monocarboxylic acid is an acetic acid or propionic acid. The amount of the monocarboxylic acid used is 0.001-1 wt%. The hydrogen phthalate compound is a potassium hydrogen phthalate. The amount of the hydrogen phthalate compound used is 0.001-1 wt%. The surface potential of the ceria particle is 10-50 mV.