发明名称 COMPOSITION FOR HARDMASK, METHOD OF FORMING PATTERNS USING THE SAME, AND SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE INCLUDING THE PATTERNS
摘要 PURPOSE: A composition for forming a hard mask, a pattern forming method using the same, and a semiconductor integrated circuit device including the same are provided to improve optical properties and to obtain high etch resistance. CONSTITUTION: A material layer is formed on a substrate. A hard mask layer is formed on the material layer. A thin film layer with silicon is formed on the hard mask layer. A photoresist layer is formed on the thin film layer with the silicon. A photoresist pattern is formed by exposing and developing the photoresist layer.
申请公布号 KR20130079149(A) 申请公布日期 2013.07.10
申请号 KR20120131181 申请日期 2012.11.19
申请人 CHEIL INDUSTRIES INC. 发明人 LEE, SUNG JAE;MOON, JOON YOUNG;CHO, YOUN JIN;KIM, YOUNG MIN;YOON, YONG WOON
分类号 H01L21/027;G03F7/11;G03F7/26 主分类号 H01L21/027
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