发明名称 |
APPARATUS FOR PROCESSING A SUBSTRATE |
摘要 |
PURPOSE: A substrate processing apparatus is provided to uniformly raise the temperature of a target and a substrate. CONSTITUTION: A gas supply part (20) is formed in one side of a process chamber (10). The gas supply part supplies gas to the gas absorbing part. A heating unit (30) is formed in the outside of a chamber body (11). The heating unit includes division units arranged along the major axis of the chamber body. Each division unit comprises at least one infrared lamp.
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申请公布号 |
KR20130078753(A) |
申请公布日期 |
2013.07.10 |
申请号 |
KR20110147868 |
申请日期 |
2011.12.30 |
申请人 |
LIGADP CO., LTD. |
发明人 |
KIM, HYO JU;KIM, YOUNG HAK |
分类号 |
H01L21/205 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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