发明名称 APPARATUS FOR PROCESSING A SUBSTRATE
摘要 PURPOSE: A substrate processing apparatus is provided to uniformly raise the temperature of a target and a substrate. CONSTITUTION: A gas supply part (20) is formed in one side of a process chamber (10). The gas supply part supplies gas to the gas absorbing part. A heating unit (30) is formed in the outside of a chamber body (11). The heating unit includes division units arranged along the major axis of the chamber body. Each division unit comprises at least one infrared lamp.
申请公布号 KR20130078753(A) 申请公布日期 2013.07.10
申请号 KR20110147868 申请日期 2011.12.30
申请人 LIGADP CO., LTD. 发明人 KIM, HYO JU;KIM, YOUNG HAK
分类号 H01L21/205 主分类号 H01L21/205
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