| 摘要 |
A solution for producing nanoscale thickness resistor films with sheet resistances above 1000Omega/□(ohm per square) and low temperature coefficients of resistance (TCR) from -50 ppm/° C. to near zero is disclosed. In a preferred embodiment, a silicon-chromium based compound material (cermet) is sputter deposited onto a substrate at elevated temperature with applied rf substrate bias. The substrate is then exposed to a process including exposure to a first in-situ anneal under vacuum, followed by exposure to air, and followed then by exposure to a second anneal under vacuum. This approach results in films that have thermally stable resistance properties and desirable TCR characteristics.
|
