发明名称 |
High-purity tellurium dioxide single crystal and manufacturing method thereof |
摘要 |
A high-purity tellurium dioxide (TeO2) single crystal and its manufacturing method are provided. The method comprises the following procedures: firstly performing a first single crystal growth, and then dissolving the resulting single crystal again, thereafter adding a precipitation agent to form powder, and finally performing a second single crystal growth of as-prepared powder to obtain the high purity single crystal. The TeO2 single crystal prepared according to present invention is of high purity, especially with a content of radioactive impurities such as U and Th decreased to a level of 10-13 g/g.
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申请公布号 |
US8480996(B2) |
申请公布日期 |
2013.07.09 |
申请号 |
US201013262209 |
申请日期 |
2010.04.02 |
申请人 |
GE ZENGWEI;ZHU YONG;WU GUOGING;YIN XUEJI;TANG LINYAO;ZHAO HANBIN;GU LIZHEN;RESEARCH AND DEVELOPMENT CENTER, SHANGHAI INSTITUTE OF CERAMICS;SHANGHAI INSTITUTE OF CERAMICS, CHINESE ACADEMY OF SCIENCES |
发明人 |
GE ZENGWEI;ZHU YONG;WU GUOGING;YIN XUEJI;TANG LINYAO;ZHAO HANBIN;GU LIZHEN |
分类号 |
C01B19/04;C30B11/02;C30B15/00 |
主分类号 |
C01B19/04 |
代理机构 |
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