发明名称 |
Resist underlayer film forming composition containing liquid additive |
摘要 |
To provide a resist underlayer film forming composition for lithography that is used in a lithography process for production of a semiconductor device. There is provided a resist underlayer film forming composition used in a lithography process for production of a semiconductor device, comprising a resin (A), a liquid additive (B) and a solvent (C). The liquid additive (B) may be an aliphatic polyether compound. The liquid additive (B) may be a polyether polyol, polyglycidyl ether or a combination thereof. Further, there is provided a method of manufacturing a semiconductor device, including the steps of forming a resist underlayer film by applying the resist underlayer film forming composition on a semiconductor substrate and by calcining the composition; forming a photoresist layer on the underlayer film; exposing the semiconductor substrate coated with the resist underlayer film and the photoresist layer to light; and developing the photoresist layer after the exposure to light.
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申请公布号 |
US8481247(B2) |
申请公布日期 |
2013.07.09 |
申请号 |
US20070310328 |
申请日期 |
2007.08.20 |
申请人 |
HORIGUCHI YUSUKE;SHINJO TETSUYA;TAKEI SATOSHI;NISSAN CHEMICAL INDUSTRIES, LTD. |
发明人 |
HORIGUCHI YUSUKE;SHINJO TETSUYA;TAKEI SATOSHI |
分类号 |
G03F7/11;C08L71/00;C09D5/32;G03F7/004;G03F7/20;H01L21/027 |
主分类号 |
G03F7/11 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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