MEMORY DEVICE CONSISTING OF ONE GRAPHENE TRANSISTOR AND METHODS OF MANUFACTURING AND OPERATING THE SAME
摘要
PURPOSE: A memory device consisting of one graphene transistor and a method for manufacturing and operating the same are provided to perform a high speed operation by using a graphene channel. CONSTITUTION: A first, a second, and a third electrode are separated from each other. A graphene layer (34) is in contact with the second and the third electrode. The graphene layer is insulated from the first electrode. The graphene layer is a memory layer. The graphene layer has the density of charge trap sites.
申请公布号
KR20130077405(A)
申请公布日期
2013.07.09
申请号
KR20110146099
申请日期
2011.12.29
申请人
SAMSUNG ELECTRONICS CO., LTD.;RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY
发明人
YOO WON JONG;LEE, DAE YOUNG;ZHANG GANG;RA, CHANG HO;LIM, YEONG DAE;CHUNG, HYUN JONG;CHOI, JAE YOUNG