发明名称 |
Methods and apparatus for forming nitrogen-containing layers |
摘要 |
Methods and apparatus for forming nitrogen-containing layers are provided herein. In some embodiments, a method includes placing a substrate having a first layer disposed thereon on a substrate support of a process chamber; heating the substrate to a temperature of at least about 250 degrees Celsius; and exposing the first layer to a radio frequency (RF) plasma formed from a process gas comprising nitrogen while maintaining the process chamber at a pressure of about 10 mTorr to about 40 mTorr to transform at least an upper portion of the first layer into a nitrogen-containing layer. In some embodiments, the process gas includes ammonia (NH3).
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申请公布号 |
US8481433(B2) |
申请公布日期 |
2013.07.09 |
申请号 |
US20100749088 |
申请日期 |
2010.03.29 |
申请人 |
BEVAN MALCOLM J.;SWENBERG JOHANES;NGUYEN SON T.;LIU WEI;MARIN JOSE ANTONIO;LI JIAN;APPLIED MATERIALS, INC. |
发明人 |
BEVAN MALCOLM J.;SWENBERG JOHANES;NGUYEN SON T.;LIU WEI;MARIN JOSE ANTONIO;LI JIAN |
分类号 |
H01L21/469 |
主分类号 |
H01L21/469 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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