发明名称 |
CMP SLURRY COMPOSITION AND POLISHING METHOD USING THE SAME |
摘要 |
PURPOSE: A CMP slurry composition is provided to be able to minimize the dishing on the oxide film over a trench layer while maintaining the polishing speed ratio of the oxide film on the trench layer to the nitride film layer over 10. CONSTITUTION: A CMP slurry composition comprises metal oxide particles having a positive Zeta electric potential, zwitterionic compound, cationic surfactant, and ultra-pure water. The metal oxide particles are manufactured by calcination, flame oxidation or hydrothermal synthesis. The metal oxide particles having a positive Zeta electric potential have 70-150 nm of an average particle diameter and 10-50 m^2/g of a specific surface area. The metal oxide particles having a positive Zeta electric potential are ceria particles. A polishing method comprises a step of polishing a semiconductor wafer by using the CMP slurry composition. [Reference numerals] (AA) First grinding; (BB) Convex part; (CC) Concave part; (DD) Second grinding; (EE) Third grinding
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申请公布号 |
KR20130077699(A) |
申请公布日期 |
2013.07.09 |
申请号 |
KR20110146562 |
申请日期 |
2011.12.29 |
申请人 |
CHEIL INDUSTRIES INC. |
发明人 |
ROH, HYUN SOO;KIM, YONG KUK;JUNG, YOUNG CHUL;KANG, DONG HUN;KIM, DONG JIN;KIM, TAI YOUNG;HONG, CHANG KI |
分类号 |
C09K3/14;H01L21/304 |
主分类号 |
C09K3/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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